2010
- Impact of interface state trap density on the performance characteristics of different III-V MOSFET architecturesB. Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, G. Hellings, G. Brammertz, K. De Meyer, I. Thayne, Asen Asenov. mr, 50(3):360-364, 2010. [doi]
2007
2004
- Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETsL. Yang, Asen Asenov, J. R. Watling, M. Boriçi, J. R. Barker, Scott Roy, K. Elgaid, I. Thayne, T. Hackbarth. mr, 44(7):1101-1107, 2004. [doi]