2010
2009
- Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technologyDavid Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin. mr, 49(12):1417-1423, 2009. [doi]
- Reliability aspects of gate oxide under ESD pulse stressAdrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix. mr, 49(12):1407-1416, 2009. [doi]
2007
2006
- Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implantD. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach. mr, 46(9-11):1597-1602, 2006. [doi]
2003
- Latchup Analysis Using Emission MicroscopyFranco Stellari, Peilin Song, Moyra K. McManus, Alan J. Weger, Robert Gauthier, Kiran V. Chatty, Mujahid Muhammad, Pia Sanda, Philip Wu, Steve Wilson. mr, 43(9-11):1603-1608, 2003. [doi]