Morteza Gholipour - researchr alias

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Viewing Publication 1 - 25 from 25

2022

A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applicationsErfan Abbasian, Morteza Gholipour. ijcta, 50(5):1537-1556, 2022. [doi]

Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAMErfan Abbasian, Shilpi Birla, Morteza Gholipour. mj, 123:105427, 2022. [doi]

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise MarginsErfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour. tcasI, 69(4):1606-1616, 2022. [doi]

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET TechnologyErfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi. cssp, 41(6):3081-3105, 2022. [doi]

Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza Gholipour. ijcta, 50(10):3642-3660, 2022. [doi]

Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable ApplicationsErfan Abbasian, Morteza Gholipour. cssp, 41(10):5914-5932, 2022. [doi]

Enhanced overloaded code division multiple access for network on chipBehnam Vakili, Morteza Gholipour. iet-cdt, 16(2-3):45-63, 2022. [doi]

2021

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells designErfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab. ijcta, 49(11):3630-3652, 2021. [doi]

Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applicationsErfan Abbasian, Morteza Gholipour. ijcta, 49(4):970-989, 2021. [doi]

Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technologyFarzaneh Izadinasab, Morteza Gholipour. mj, 113:105100, 2021. [doi]

2020

Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza Gholipour. integration, 75:52-62, 2020. [doi]

2019

OFF ratioArash Rezaei, Bahram Azizollah Ganji, Morteza Gholipour. iet-cds, 13(3):309-313, 2019. [doi]

2018

Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect TransistorsMorteza Gholipour, Ying-Yu Chen, Deming Chen. tcad, 37(4):820-831, 2018. [doi]

2016

Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scalingYing-Yu Chen, Morteza Gholipour, Deming Chen. aspdac 2016: 761-768 [doi]

Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen. tvlsi, 24(2):650-663, 2016. [doi]

2014

Graphene nanoribbon crossbar architecture for low power and dense circuit implementationsMorteza Gholipour, Nasser Masoumi. mj, 45(11):1533-1541, 2014. [doi]

Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scalingMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Deming Chen. date 2014: 1-6 [doi]

2013

Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performanceYing-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen. NANOARCH 2013: 82-88 [doi]

Graphene nano-ribbon field-effect transistors as future low-power devicesYing-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen. islped 2013: 151-156 [doi]

Design investigation of nanoelectronic circuits using crossbar-based nanoarchitecturesMorteza Gholipour, Nasser Masoumi. mj, 44(3):190-200, 2013. [doi]

2012

Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnectsMorteza Gholipour, Nasser Masoumi. iet-cds, 6(4):252-259, 2012. [doi]

2011

Design and Implementation of Lifting Based Integer Wavelet Transform for Image Compression ApplicationsMorteza Gholipour. DICTAP 2011: 161-172 [doi]

A comparative study of nanowire crossbar and MOSFET logic implementationsMorteza Gholipour, Nasser Masoumi. eurocon 2011: 1-4 [doi]

2006

Comparative study of asynchronous pipeline design methodsKambiz Shojaee, Morteza Gholipour, Ali Afzali-Kusha, Mehrdad Nourani. ieiceee, 3(8):163-171, 2006. [doi]

2005

An efficient model for performance analysis of asynchronous pipeline design methodsMorteza Gholipour, Hamid Shojaee, Ali Afzali-Kusha, Ahmad Khademzadeh, Mehrdad Nourani. iscas 2005: 5234-5237 [doi]

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