Shigetaka Kumashiro - researchr alias

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2023

Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring OscillatorsKazutoshi Kobayashi, Tomoharu Kishita, Hiroki Nakano, Jun Furuta, Mitsuhiko Igarashi, Shigetaka Kumashiro, Michitarou Yabuuchi, Hironori Sakamoto. irps 2023: 1-7 [doi]

2020

An Efficient and Accurate Time Step Control Method for Power Device Transient Simulation Utilizing Dominant Time Constant ApproximationShigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi. tcad, 39(2):451-463, 2020. [doi]

2013

A predictable compact model for non-monotonous Vth-Pelgrom plot of long channel halo-implanted transistorsShigetaka Kumashiro. isqed 2013: 391-397 [doi]

Measurements and Simulation of Sensitivity of Differential-Pair Transistors against Substrate Voltage VariationSatoshi Takaya, Yoji Bando, Toru Ohkawa, Toshiharu Takaramoto, Toshio Yamada, Masaaki Souda, Shigetaka Kumashiro, Tohru Mogami, Makoto Nagata. ieicet, 96-C(6):884-893, 2013. [doi]

2012

2011

2010

Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout PatternsKenta Yamada, Toshiyuki Syo, Hisao Yoshimura, Masaru Ito, Tatsuya Kunikiyo, Toshiki Kanamoto, Shigetaka Kumashiro. ieicet, 93-C(8):1349-1358, 2010. [doi]

2008

2005

1/::::f::::-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit SimulationShizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama. ieicet, 88-C(2):247-254, 2005. [doi]

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-PotentialDondee Navarro, Takeshi Mizoguchi, Masami Suetake, Kazuya Hisamitsu, Hiroaki Ueno, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama. ieicet, 88-C(5):1079-1086, 2005. [doi]

MOSFET harmonic distortion analysis up to the non-quasi-static frequency regimeYouichi Takeda, Dondee Navarro, Shingo Chiba, Michiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto. cicc 2005: 827-830 [doi]

2003

Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit designKazuya Hisamitsu, Hiroaki Ueno, Masayasu Tanaka, Daisuke Kitamaru, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama. aspdac 2003: 179-183 [doi]

2002

Circuit Simulation Models for Coming MOSFET GenerationsMitiko Miura-Mattausch, Hiroaki Ueno, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama. ieiceta, 85-A(4):740-748, 2002. [doi]

2001

1993

Asymptotic waveform evaluation for transient analysis of 3-D interconnect structuresShigetaka Kumashiro, Ronald A. Rohrer, Andrzej J. Strojwas. tcad, 12(7):988-996, 1993. [doi]

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