3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers

Yi-Chung Chen, Hai Li, Yiran Chen, Robinson E. Pino. 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. In Design, Automation and Test in Europe, DATE 2011, Grenoble, France, March 14-18, 2011. pages 583-586, IEEE, 2011. [doi]

Abstract

Abstract is missing.