SRAM device and cell co-design considerations in a 14nm SOI FinFET technology

Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov. SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 2339-2342, IEEE, 2013. [doi]

Abstract

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