Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs

Jin He, Xing Zhang, Ru Huang, Yangyuan Wang. Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectronics Reliability, 42(1):145-148, 2002. [doi]

Abstract

Abstract is missing.