Ground gated 8T SRAM cells with enhanced read and hold data stability

Hailong Jiao, Volkan Kursun. Ground gated 8T SRAM cells with enhanced read and hold data stability. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2013, Natal, Brazil, August 5-7, 2013. pages 52-57, IEEE, 2013. [doi]

Abstract

Abstract is missing.