A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS

Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, M. Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang. A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS. J. Solid-State Circuits, 51(4):1003-1008, 2016. [doi]

Abstract

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