Geometry based resistance model for phase change memory

K. C. Kwong, Philip K. T. Mok, Mansun Chan. Geometry based resistance model for phase change memory. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 101-104, IEEE, 2012. [doi]

Abstract

Abstract is missing.