Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD - researchr publication related

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Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li. Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. Microelectronics Journal, 39(9):1108-1111, 2008. [doi]

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