A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan. A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. In 10th International Symposium on Quality of Electronic Design (ISQED 2009), 16-18 March 2009, San Jose, CA, USA. pages 7-12, IEEE, 2009. [doi]

Abstract

Abstract is missing.