Abstract is missing.
- Automotive electronics and energy efficiencyReinhard Ploss. 1-2 [doi]
- FinFETs - Technology and circuit design challengesW. P. Maszara, M.-R. Lin. 3-8 [doi]
- MEMS for automotive and consumer electronicsStefan Finkbeiner. 9-14 [doi]
- Cyborg insects, neural dust and other things: Building interfaces between the synthetic and the multicellularT. Blanche, J. Van Kleef, P. Ledochowitsch, T. Massey, R. Muller, D. J. Seo, M. M. Maharbiz. 15 [doi]
- Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologiesJesús A. del Alamo. 16-21 [doi]
- Ultrahigh-voltage SiC devices for future power infrastructureTsunenobu Kimoto. 22-29 [doi]
- Emerging memoriesLivio Baldi, Gurtej Sandhu. 30-36 [doi]
- 2D electronics: Graphene and beyondWei Cao, Jiahao Kang, Wei Liu, Yasin Khatami, Deblina Sarkar, Kaustav Banerjee. 37-44 [doi]
- Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurationsYukinori Morita, T. Mori, Shinji Migita, Wataru Mizubayashi, A. Tanabe, K. Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Y. X. Liu, Meishoku Masahara, Hiroyuki Ota. 45-48 [doi]
- On the optimization of SiGe and III-V compound hetero-junction Tunnel FET devicesAlberto Revelant, Pierpaolo Palestri, Patrik Osgnach, Daniel Lizzit, Luca Selmi. 49-52 [doi]
- Characterization of border traps in III-V MOSFETs using an RF transconductance methodSofia Johansson, Jiongjiong Mo, Erik Lind. 53-56 [doi]
- Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrateA. Agboton, N. Defrance, P. Altuntas, V. Avramovic, A. Cutivet, R. Ouhachi, J.-C. De Jaeger, S. Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink. 57-60 [doi]
- Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility TransistorsD. Bisi, Matteo Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso. 61-64 [doi]
- Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detectionOlivier Martin, Éric Colinet, Eric Sage, Cecilia Dupre, Patrick Villard, Sebastien Hentz, Laurent Duraffourg, Thomas Ernst. 65-68 [doi]
- Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platformEmanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. 69-72 [doi]
- Boosting InAs TFET on-current above 1 mA/μm with no leakage penaltyGiovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. 73-76 [doi]
- Full-band simulation of p-type ultra-scaled silicon nanowire transistorsAron Szabo, Mathieu Luisier. 77-80 [doi]
- Gate stack optimization to minimize power consumption in super-lattice fetsP. Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggian, Giorgio Baccarani. 81-84 [doi]
- Investigation of carbon-silicon schottky diodes and their use as chemical sensorsGeorg S. Duesberg, Hye-Young Kim, Kangho Lee, Niall McEvoy, Sinead Winters, Chanyoung Yim. 85-90 [doi]
- Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, R. Wise, M.-Y. Chuang, W. Tian, M. Denison. 91-94 [doi]
- An experimental study of integrated DMOS transistors with increased energy capabilityTimo Zawischka, Martin Pfost, Michael Ebli, Dragos Costachescu. 95-98 [doi]
- Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulationsPanagiotis Sarafis, Emmanouel Hourdakis, Androula G. Nassiopoulou. 99-102 [doi]
- 4H-SiC MESFET specially designed and fabricated for high temperature integrated circuitsM. Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán. 103-106 [doi]
- Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMTTakamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, A. Nishiyama, Nobuyuki Sugii, H. Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. 107-110 [doi]
- Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-sideV. Papageorgiou, A. Khalid, M. J. Steer, C. Li, D. R. S. Cumming. 111-114 [doi]
- Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTsTomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu. 115-118 [doi]
- Role of junction depth in light emission from silicon p-i-n ledsGiulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz, Lis K. Nanver. 119-122 [doi]
- Filter-less color sensor in standard CMOS technologyGraciele Batistell, Johannes Sturm. 123-126 [doi]
- New color sensor concept based on single spectral tunable photodiodeAndre Wachowiak, Stefan Slesazeck, Paul Jordan, Jurgen Holz, Thomas Mikolajick. 127-130 [doi]
- Towards rectennas for solar energy harvestingN. Sedghi, J. W. Zhang, J. F. Ralph, Y. Huang, I. Z. Mitrovic, Steve Hall. 131-134 [doi]
- Photodiodes in deep submicron CMOS process for fully integrated optical receiversWaqas Ahmad, Markus Tormanen, Henrik Sjöland. 135-138 [doi]
- Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETsSangHyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. 139-142 [doi]
- Scalability of ultra-thin-body and BOX InGaAs MOSFETs on siliconL. Czornomaz, N. Daix, P. Kerber, K. Lister, D. Caimi, C. Rossel, M. Sousa, E. Uccelli, J. Fompeyrine. 143-146 [doi]
- The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowireB. Voisin, B. Roche, E. Dupont-Ferrier, B. Sklenard, M. Cobian, Xavier Jehl, O. Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, S. De Franceschi, Marc Sanquer. 147-150 [doi]
- Novel low temperature 3D wafer stacking technology for high density device integrationIonut Radu, Gweltaz Gaudin, W. van den Daele, F. Letertre, C. Mazure, Léa Di Cioccio, T. Lacave, F. Mazen, P. Scheiblin, Thomas Signamarcheix, Sorin Cristoloveanu. 151-154 [doi]
- Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETsEugenio Dentoni Litta, Per-Erik Hellstrom, Mikael Östling. 155-158 [doi]
- STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) processDoyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, A. De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha. 159-162 [doi]
- Connecting RRAM performance to the properties of the hafnia-based dielectricsGennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani. 163-165 [doi]
- Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRSFrancesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher. 166-169 [doi]
- On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculationsB. Traore, Elisa Vianello, Gabriel Molas, M. Gely, J.-F. Nodin, E. Jalaguier, P. Blaise, B. De Salvo, L. R. C. Fonseca, K.-H. Xue, Y. Nishi. 170-173 [doi]
- Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin filmsYoshifumi Nishi, Sebastian Schmelzer, Ulrich Bottger, Rainer Waser. 174-177 [doi]
- A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filamentSangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang. 178-181 [doi]
- ACE: A robust variability and aging sensor for high-k/metal gate SoCMin Chen, Vijay Reddy, Srikanth Krishnan, Jay Ondrusek, Yu Cao. 182-185 [doi]
- Investigation of SRAM using BTI-aware statistical compact modelsJie Ding, Dave Reid, Campbell Millar, Asen Asenov. 186-189 [doi]
- Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistorsMarc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, H. Arimura, M. Cho, Thomas Kauerauf, Guido Groeseneken, N. Horiguchi, A. Thean, A. Federico, Felice Crupi, A. Spessot, C. Caillat, P. Fazan, H.-J. Na, Y. Son, K. B. Noh. 190-193 [doi]
- Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfetsS. Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu. 194-197 [doi]
- Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillationsRemi Coquand, Sylvain Barraud, Mikaël Casse, Masahiro Koyama, V. Maffini-Alvaro, M.-P. Samson, L. Tosti, X. Mescot, G. Ghibaudo, S. Monfray, Frédéric Boeuf, Olivier Faynot, B. De Salvo. 198-201 [doi]
- Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodesWataru Mizubayashi, K. Fukuda, T. Mori, K. Endol, Y. X. Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Y. Ishikawa, Shinji Migita, Y. Morita, A. Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota. 202-205 [doi]
- On the strain induced by arsenic into siliconStephane Koffel, Peter Pichler, Jürgen Lorenz, Gabriele Bisognin, Enrico Napolitani, Davide De Salvador. 206-209 [doi]
- High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layersNegin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver. 210-213 [doi]
- Melt depth and time variations during pulsed laser thermal annealing with one and more pulsesM. Hackenberg, M. Rommel, M. Rumler, J. Lorenz, P. Pichler, K. Huet, R. Negru, G. Fisicaro, A. La Magna, N. Taleb, M. Quillec. 214-217 [doi]
- Effect of ions presence in the SiOCH inter metal dielectric structureB. Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, M. Mantelli, O. Paulet, L. Lopez, Romain Laffont. 218-221 [doi]
- Novel back-biased UTBB lateral SCR for FDSOI ESD protectionsYohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand, Claire Fenouillet-Béranger, Philippe Ferrari, Sorin Cristoloveanu. 222-225 [doi]
- Reliability tests for discriminating between technological variants of QFN packagingMarius Bazu, Virgil Emil Ilian, Dragos Varsescu, Lucian Galateanu, Vili Sikio, Meelis Reimets, Volker Uhl, Manuel Weiss. 226-229 [doi]
- Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storageVihar P. Georgiev, Stanislav Markov, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov. 230-233 [doi]
- Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stabilityXingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov. 234-237 [doi]
- Flicker noise in advanced CMOS technology: Effects of halo implantNavid Paydavosi, Sriramkumar Venugopalan, Angada B. Sachid, Ali Niknejad, Chenming Hu, Sagnik Dey, Samuel Martin, Xin Zhang. 238-241 [doi]
- Characterization of n-channel MOSFETs: Electrical measurements and simulation analysisV. Uhnevionak, C. Strenger, Alexander Burenkov, V. Mortet, Elena Bedel-Pereira, Jürgen Lorenz, P. Pichler. 242-245 [doi]
- Reconfigurable nanowire electronics - Device principles and circuit prospectsWalter M. Weber, Jens Trommer, Dominik Martin, Matthias Grube, Andre Heinzig, Thomas Mikolajick. 246-251 [doi]
- Electrical and thermoelectrical properties of gated InAs nanowiresPhilipp Mensch, Siegfried F. Karg, Bernd Gotsmann, Pratyush Das Kanungo, Volker Schmidt, Valentina Troncale, Heinz Schmid, Heike Riel. 252-255 [doi]
- Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETsS. Richter, S. Vitusevich, S. Pud, J. Li, Lars Knoll, Stefan Trellenkamp, Anna Schäfer, S. Lenk, Qing-Tai Zhao, Andreas Offenhäusser, S. Mantl, K. K. Bourdelle. 256-259 [doi]
- Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memoriesT. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, T. Mikolajick. 260-263 [doi]
- A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applicationsG. Palma, Elisa Vianello, O. Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, C. Carabasse, Gabriel Molas, B. De Salvo. 264-267 [doi]
- Nonvolatile resistive memory devices based on hydrogenated amorphous carbonL. Dellmann, Abu Sebastian, P. Jonnalagadda, C. A. Santini, W. W. Koelmans, C. Rossel, Evangelos Eleftheriou. 268-271 [doi]
- Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer serviceR. Nakane, Yusuke Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, Satoshi Sugahara. 272-275 [doi]
- Nanomagnetic logic clocked in the MHz regimeMarkus Becherer, Josef Kiermaier, Stephan Breitkreutz, Irina Eichwald, György Csaba, Doris Schmitt-Landsiedel. 276-279 [doi]
- Micron-scale inkjet-assisted digital lithography for large-area flexible electronicsR. A. Sporea, A. S. Alshammari, S. Georgakopoulos, J. Underwood, M. Shkunov, S. R. P. Silva. 280-283 [doi]
- Design and array implementation a cantilever-based non-volatile memory utilizing vibrational resetAnh-Tuan Do, Karthik G. Jayaraman, Pushpapraj Singh, Chua Geng Li, Kiat Seng Yeo, Tony Tae-Hyoung Kim. 284-287 [doi]
- RF MEMS power sensors for ultra-low power wake-up circuit applicationsWolfgang A. Vitale, Montserrat Fernandez-Bolaños, Antonios Bazigos, Catherine Dehollain, Adrian Mihai Ionescu. 288-291 [doi]
- Design of a poly silicon MEMS microphone for high signal-to-noise ratioAlfons Dehe, Martin Wurzer, Marc Fuldner, Ulrich Krumbein. 292-295 [doi]
- Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETsSung-Jae Chang, Sorin Cristoloveanu, Maryline Bawedin, Jong-Hyun Lee, Jung Hee Lee, S. Mukhopadhyay, B. A. Piot. 296-299 [doi]
- Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETsMasahiro Koyama, Mikael Casse, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold. 300-303 [doi]
- Why are SCE overestimated in FD-SOI MOSFETs?Carlos Navarro, Maryline Bawedin, François Andrieu, Bruno Sagnes, Sorin Cristolovcanu. 304-307 [doi]
- Atomistic simulation of electron and phonon transport in nano-devicesMathieu Luisier, Reto Rhyner. 308-313 [doi]
- DC and small-signal numerical simulation of graphene base transistor for terahertz operationValerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. 314-317 [doi]
- Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz bandTetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto. 318-321 [doi]
- On-wafer graphene diodes for high-frequency applicationsMircea Dragoman, Adrian Dinescu, Daniela Dragoman. 322-325 [doi]
- Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfacesHoel Guerin, Helene Le Poche, Roland Pohle, Montserrat Fernandez-Bolaños, Jean Dijon, Adrian M. Ionescu. 326-329 [doi]
- A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 kVictor Vega-Gonzalez, Edmundo Gutierrez-Dominguez, Fernando Guarin. 330-333 [doi]
- Reduction of momentum and spin relaxation rate in strained thin silicon filmsDmitry Osintsev, Viktor Sverdlov, Siegfried Selberherr. 334-337 [doi]
- Compact modeling of STT-MTJ for SPICE simulationZihan Xu, Ketul Sutaria, Chengen Yang, Chaitali Chakrabarti, Yu Cao. 338-341 [doi]
- Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulationTsanka Z. Todorova, Philippe Blaise, Elisa Vianello, Leonardo R. C. Fonseca. 342-345 [doi]
- Modeling the dynamic self-heating of PCMGiuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Andrea Cappelli. 346-349 [doi]
- Low power finfet ph-sensor with high-sensitivity voltage readoutS. Rigante, Paolo Livi, M. Wipf, K. Bedner, Didier Bouvet, A. Bazigos, A. Rusu, Andreas Hierlemann, Adrian M. Ionescu. 350-353 [doi]
- Flexible platinum nanoparticle strain sensorsE. Skotadis, D. Mousadakos, J. Tanner, Dimitrios Tsoukalas, Panagiotis Broutas. 354-357 [doi]
- MEMS sensors for high voltage linesVictor Moagar-Poladian, Gabriel Moagar-Poladian. 358-361 [doi]
- Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mmNiko Munzenrieder, Luisa Petti, Christoph Zysset, Deniz Gork, Lars Buthe, Giovanni A. Salvatore, Gerhard Tröster. 362-365 [doi]