Abstract is missing.
- Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurementsS. Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, M. Coue, Luca Perniola, P. Zuliani, R. Annunziata. 1 [doi]
- Understanding the underlying degradation physics for proper time-to-failure distribution selectionJ. W. McPherson. 1 [doi]
- Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulationNicolas Borrel, Clement Champeix, Mathieu Lisart, Alexandre Sarafianos, Edith Kussener, Wenceslas Rahajandraibe, Jean-Max Dutertre. 1 [doi]
- Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tagTaiki Uemura, Masanori Hashimoto. 1 [doi]
- An investigation of process dependence of porous IMD TDDBW. Y. Zhang, M. C. Silvestre, A. Selvam, E. Ramanathan, C. Ordonio, J. Schaller, T. Shen, K. B. Yeap, C. Capasso, P. Justison, J. H. Lee. 1 [doi]
- Electrical and reliability performance of atomic layer deposition HfO2 capping layer on porous low dielectric constant materialsKai-Chieh Kao, Chi Jia Huang, Chang-Sian Wu, Yi-Lung Cheng. 1 [doi]
- Degradation rate for surface pitting in GaN HEMTBruce M. Paine, Vincent T. Ng, Steve R. Polmanter, Neil T. Kubota, Carl R. Ignacio. 1 [doi]
- Mechanical reliability assessment of 28nm Back End of Line (BEoL) stack using finite element analysis and validationKashi Vishwanath Machani, Holm Geisler, Dirk Breuer, Frank Kuechenmeister, Jens Paul. 1 [doi]
- Keynote Address 1: "Transistors and reliability in the innovation era"Kaizad Mistry. 1 [doi]
- Keynote Address 2: "Hybrid memory cube: Achieving high performance and high reliability"Brent Keeth. 1 [doi]
- NBTI and HCD aware behavioral models for reliability analysis of analog CMOS circuitsNils Heidmann, Nico Hellwege, Steffen Paul, Dagmar Peters-Drolshagen. 1 [doi]
- New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETsChristoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo. 1 [doi]
- The impact of inverter-like transitions on device TDDB and ring oscillatorsT.-Y. Yew, Y. C. Huang, M.-H. Hsieh, W. Wang, Y. H. Lee. 1 [doi]
- A failure physics model for hardware Trojan detection based on frequency spectrum analysisChunhua He, Bo Hou, Liwei Wang, Yunfei En, Shaofeng Xie. 1 [doi]
- Impact of electrode surface modulation on time-dependent dielectric breakdownKong Boon Yeap, Tian Shen, Galor Wenyi Zhang, Sing Fui Yap, Brian Holt, Arfa Gondal, Seungman Choi, San Leong Liew, Walter Yao, Patrick Justison. 2 [doi]
- An evaluation of accelerated failure time models of stress-migration and stress-induced voiding failures under viasGavin D. R. Hall, Derryl D. J. Allman. 2 [doi]
- Susceptibility of planar and 3D tri-gate technologies to muon-induced single event upsetsNorbert Seifert, Shah M. Jahinuzzaman, Jyothi Velamala, Nikunj Patel. 2 [doi]
- Interconnect design study for electromigration reliability improvementGiulio Marti, Lucile Arnaud, David Ney, Yves Wouters. 2 [doi]
- Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanismJongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae. 2 [doi]
- NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architecturesJacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken. 2 [doi]
- Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devicesThierry Kociniewski, Zoubir Khatir. 2 [doi]
- New insight in plasma charging impact on gate oxide breakdown in FDSOI technologyM. Akbal, G. Ribes, L. Vallier. 2 [doi]
- Critical charge dependence of correlation of different neutron sources for soft error testingHiroko Mori, Taiki Uemura, Hideya Matsuyama, Shin-ichiro Abe, Yukinobu Watanabe. 2 [doi]
- Constant voltage electromigration for advanced BEOL copper interconnectsBaojun Tang, Kris Croes, Nicolas Jourdan, Jürgen Bömmels, Zsolt Tokei, Ingrid De Wolf, Eric Wilcox, Timothy McMullen. 2 [doi]
- Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistorsMatteo Meneghini, R. Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, A. Banerjee, Peter Moens. 2 [doi]
- Performance and reliability of strained SOI transistors for advanced planar FDSOI technologyG. Besnard, Xavier Garros, A. Subirats, François Andrieu, X. Federspiel, M. Rafik, W. Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu. 2 [doi]
- Transistor aging and reliability in 14nm tri-gate technologyS. Novak, C. Parker, D. Becher, M. Liu, M. Agostinelli, M. Chahal, P. Packan, P. Nayak, S. Ramey, S. Natarajan. 2 [doi]
- Intrinsic mechanism of non-linearity in Weibull TDDB lifetime and its impact on lifetime predictionKenji Okada, Kazumi Kurimoto, Mitsuhiro Suzuki. 2 [doi]
- Diagnostic electromigration reliability evaluation with a local sensing structureFen Chen, Erik McCullen, Cathryn Christiansen, Michael A. Shinosky, Roger Dufresne, Prakash Periasamy, Rick Kontra, Carole Graas, Gary StOnge. 2 [doi]
- Printed-circuit board (PCB) charge induced product yield-loss during the final testJian-Hsing Lee, Kunihiko Takahashi, Manjunatha Prabhu, Mahadeva Iyer Natarajan. 2 [doi]
- Power debug on Fully Integrated Voltage Regulators (FIVR) circuitry introduced deep low power statesYuan-Chuan Steven Chen, Dave Budka, Auston Gibertini, Joe Davis. 2 [doi]
- Systematical study of 14nm FinFET reliability: From device level stress to product HTOLChangze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, HyunWoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park. 2 [doi]
- Intrinsic reliability of local interconnects for N7 and beyondKris Croes, Alicja Lesniewska, Chen Wu, Ivan Ciofi, Agnieszka Banczerowska, B. Briggs, S. Demuynck, Zsolt Tokei, Jürgen Bömmels, Y. Saad, W. Gao. 2 [doi]
- Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMsGilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche. 2 [doi]
- Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMsBalaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed. 2 [doi]
- Hot-carrier degradation in single-layer double-gated graphene field-effect transistorsYury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, T. Mueller, Max C. Lemme, Tibor Grasser. 2 [doi]
- Time-integrated photon emission as a function of temperature in 32 nm CMOSAndrea Bahgat Shehata, Alan J. Weger, Franco Stellari, Peilin Song, Hervé Deslandes, Ted Lundquist, Euan Ramsay. 2 [doi]
- Negative bias temperature instability caused by plasma induced damage in 65 nm bulk and Silicon on thin BOX (SOTB) processesRyo Kishida, Azusa Oshima, Kazutoshi Kobayashi. 2 [doi]
- Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnectsM. H. Lin, A. S. Oates. 2 [doi]
- Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurementsFranco Stellari, Keith A. Jenkins, Alan J. Weger, Barry P. Linder, Peilin Song. 2 [doi]
- A case study of electromigration reliability: From design point to system operationsBaozhen Li, K. Paul Muller, James D. Warnock, Leon J. Sigal, Dinesh Badami. 2 [doi]
- The reversed intrinsic curve and voltage dependence for ultra-low k dielectricsWei-Ting Kary Chien, Atman Yong Zhao, Liwen Zhang, Flora Cheng. 2 [doi]
- Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applicationsChandrasekharan Kothandaraman, X. Chen, Dan Moy, D. Lea, Sami Rosenblatt, F. Khan, D. Leu, Toshiaki Kirihata, D. Ioannou, G. La Rosa, J. B. Johnson, Norman Robson, Subramanian S. Iyer. 2 [doi]
- Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTsA. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, P. Saunier, C. Lee, S. A. Ringel, A. R. Arehart. 2 [doi]
- Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacksM. P. King, J. R. Dickerson, S. DasGupta, M. J. Marinella, R. J. Kaplar, Daniel Piedra, M. Sun, Tomas Palacios. 2 [doi]
- Study of a new electromigration failure mechanism by novel test structureL. D. Chen, B. L. Lin, M.-H. Hsieh, C. W. Chang, J.-S. Tsai, J. C. Peng, C.-C. Chiu, Y. H. Lee. 2 [doi]
- NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridationP. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, S. Siddiqui, R. G. Southwick, E. Cartier. 2 [doi]
- A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)Ernest Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla. 2 [doi]
- Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETsG. Sereni, Luca Vandelli, R. Cavicchioli, Luca Larcher, D. Veksler, Gennadi Bersuker. 2 [doi]
- MBU-Calc: A compact model for Multi-Bit Upset (MBU) SER estimationWei Wu, Norbert Seifert. 2 [doi]
- Enhancement mode gallium nitride transistor reliabilityAlex Lidow, Rob Strittmatter, ChunHua Zhou, Yanping Ma. 2 [doi]
- High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTsMatthias Wespel, M. Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher. 2 [doi]
- Thermal behavior of self-heating effect in FinFET devices acting on back-end interconnectsC. W. Chang, S. E. Liu, B. L. Lin, C.-C. Chiu, Y. H. Lee, K. Wu. 2 [doi]
- TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyondCheng Pu Chiu, Yen-Chun Liu, Bin-Siang Tsai, Yi-Jing Wang, Yeh-Sheng Lin, Yun-Ru Chen, Chien-Lin Weng, Sheng-Yuan Hsueh, Jack Hung, Ho-Yu Lai, Jei-Ming Chen, Albert H.-B. Cheng, Chien-Chung Huang. 3 [doi]
- Origins and implications of increased channel hot carrier variability in nFinFETsBen Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, L. M. Procel, L. Trojman, Felice Crupi, G. Pitner, V. Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean. 3 [doi]
- Connecting the physical and application level towards grasping aging effectsHussam Amrouch, Javier Martín-Martínez, Victor M. van Santen, Miquel Moras, Rosana Rodríguez, Montserrat Nafría, Jörg Henkel. 3 [doi]
- Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanismsYu-Chien Chiu, Chun-Yen Chang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Min-Hung Lee. 3 [doi]
- Stress-induced instabilities of shunt paths in high efficiency MWT solar cellsMarco Barbato, Matteo Meneghini, Andrea Cester, A. Barbato, Enrico Zanoni, Gaudenzio Meneghesso, Giovanna Mura, D. Tonini, A. Voltan, G. Cellere. 3 [doi]
- TSV/FET proximity study using dense addressable transistor arraysRaphael Robertazzi, Kanak Agarwal, Bucknell Webb, Christy Tyberg. 3 [doi]
- Managing performance-reliability tradeoffs in multicore processorsWilliam J. Song, Saibal Mukhopadhyay, Sudhakar Yalamanchili. 3 [doi]
- Platform qualification methodology: Face recognitionGhadeer Antanius, Rutvi Trivedi, Robert Kwasnick. 3 [doi]
- An investigation of capacitance aging model for extreme low-k and high-k dielectricsM. N. Chang, Y. H. Lee, S. Y. Lee, C.-C. Chiu, D. Maji, K. Wu. 3 [doi]
- Mitigating "No trouble found" component returnsAmr Haggag, Nik Sumikawa, Aamer Shaukat, J. K. Jerry Lee, Nick Aghel, Charlie Slayman. 3 [doi]
- A method for rapid screening of various low-k TDDB modelsFen Chen, Carole Graas, Michael A. Shinosky, Chad Burke, Kai D. Feng, Craig Bocash, Ramachandran Muralidhar. 3 [doi]
- Improved GGSCR layout for overshoot reductionZaichen Chen, Robert Mertens, Collin Reiman, Elyse Rosenbaum. 3 [doi]
- Higher performance and improved reliability: Key to making photovoltaics the mainstream sustainable electricity generation source of the 21st CenturyJ. Poortmans, E. Voroshaszi, W. Deceuninck, J. Szlufcik, J. Poortmans, W. Deceuninck. 3 [doi]
- Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTIA. Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, S. Mahapatra. 3 [doi]
- Localized thermal effect of sub-16nm FinFET technologies and its impact on circuit reliability designs and methodologiesYongsheng Sun, Canhui Zhan, Jianping Guo, Yiwei Fu, Guangming Li, Jun Xia. 3 [doi]
- ESD characterization of planar InGaAs devicesZ. Ji, Dimitri Linten, R. Boschke, Geert Hellings, S. H. Chen, A. Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, J. F. Zhang, W. Zhang, Nadine Collaert, Guido Groeseneken. 3 [doi]
- Stochastic and topologically aware electromigration analysis for clock skewPalkesh Jain, Sachin S. Sapatnekar, Jordi Cortadella. 3 [doi]
- Short localization in CPU FlipChip using thermal imaging and magnetic current imaging: Advanced fault isolation technique comparisonJan Gaudestad, Antonio Orozco, Jack Chen. 3 [doi]
- Maximum operating voltage (VMAX) limit for SOCs in thin form factor mobile devices with touch sensitive displaysK. Maitra, T. Nguyen, K. Srinivasan, S. Chen, V. Jadhav, B. Langendorf, J. Purtell, R. Jensen, R. Gannamani, A. Marathe, R. Master. 3 [doi]
- A novel 8kV on-chip surge protection design in xDSL line driver ICSheng-Fu Hsu, Jer-Yuan Jao. 3 [doi]
- An investigation of dielectric thickness scaling on BEOL TDDBTian Shen, Wenyi Zhang, Kong Boon Yeap, Jing Tan, Walter Yao, Patrick Justison. 3 [doi]
- Effects of copper CMP and post clean process on VRDB and TDDB at 28nm and advanced technology nodeLi Chieh Hsu, Yu-Min Lin, Chien-Liang Wu, Wei Kun Lee, Yen-Chun Liu, Cheng Pu Chiu, Hsin Kuo Hsu, Chun-Yi Wang, Chien-Chung Huang, Chin Fu Lin. 3 [doi]
- Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beamsGeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman. 3 [doi]
- Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologiesA. Kerber. 3 [doi]
- ESD protection clamp with active feedback and mis-trigger immunity in 28nm CMOS processSrivatsan Parthasarathy, Javier A. Salcedo, Sandro Herrera, Jean-Jacques Hajjar. 3 [doi]
- Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effectsAndrea Cester, Nicola Wrachien, Massimiliano Bon, Gaudenzio Meneghesso, Roberta Bertani, Roberto Tagliaferro, Simone Casolucci, Thomas M. Brown, Andrea Reale, Aldo Di Carlo. 3 [doi]
- Methodology to achieve planar technology-like ESD performance in FINFET processJian-Hsing Lee, Manjunatha Prabhu, Konstantin Korablev, Jagar Singh, Mahadeva Iyer Natarajan, Shesh Mani Pandey. 3 [doi]
- Wafer-level electromigration for reliability monitoring: Quick-turn electromigration stress with correlation to package-level stressD. Slottke, R. J. Kamaladasa, M. Harmes, I. Tsamaret, M. Kobrinsky, Timothy McMullen, John Dunklee. 3 [doi]
- Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoCJongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae. 3 [doi]
- Transistor reliability variation correlation to threshold voltageS. Ramey, M. Chahal, P. Nayak, S. Novak, C. Prasad, J. Hicks. 3 [doi]
- Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiCM. A. Anders, P. M. Lenahan, A. J. Lelis. 3 [doi]
- Reliability of HfAlOx in multi layered gate stackM. Nasir Bhuyian, D. Misra. 3 [doi]
- Circuit delay variability due to wire resistance evolution under AC electromigrationVivek Mishra, Sachin S. Sapatnekar. 3 [doi]
- On the voltage dependence of copper/low-k dielectric breakdownShou Chung Lee, A. S. Oates. 3 [doi]
- Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technologyPieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken. 3 [doi]
- Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technologyA. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier. 3 [doi]
- A fWLR test structure and method for device reliability monitoring using product relevant circuitsRolf-Peter Vollertsen, Georg Georgakos, K. Kölpin, C. Olk. 3 [doi]
- A novel high level ESD FDNSCR with drain side engineering in PMIC applicationYi-Ning He, Jhih-Ming Wang, Tien-Hao Tang, Kuan-Cheng Su. 4 [doi]
- A highly reliable DRAM 3-D wafer thinning processAkram Ditali, Bill Black, Manny Ma, Mike Ball, Guohua Wei, J. Michael Brand. 4 [doi]
- Device performance analysis on 20nm technology thin wafers in a 3D packageSukeshwar Kannan, Rahul Agarwal, Arnaud Bousquet, Geetha Aluri, Hui-Shan Chang. 4 [doi]
- Soft error immune latch design for 20 nm bulk CMOSTaiki Uemura, Takashi Kato, Hideya Matsuyama, Masanori Hashimoto. 4 [doi]
- Impact of DC and RF non-conducting stress on nMOS reliabilityA. Cattaneo, S. Pinarello, J. E. Mueller, R. Weigel. 4 [doi]
- Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliabilityM. G. Farooq, G. La Rosa, Fen Chen, P. Periasamy, T. L. Graves-Abe, Chandrasekharan Kothandaraman, C. Collins, W. Landers, J. Oakley, J. Liu, John Safran, S. Ghosh, S. Mittl, D. Ioannou, Carole Graas, D. Berger, Subramanian S. Iyer. 4 [doi]
- Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formationJongwoo Park, Miji Lee, Kyunghwan Min, J. K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae. 4 [doi]
- Impacts of 3-D integration processes on device reliabilities in thinned DRAM chip for 3-D DRAMKang-Wook Lee, Ji Chel Bea, Mariappan Murugesan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi. 4 [doi]
- Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stressNilesh Goel, Tejas Naphade, Souvik Mahapatra. 4 [doi]
- A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp testSean P. Ogden, Juan Borja, Huawei Zhou, Joel L. Plawsky, Toh-Ming Lu, William N. Gill. 4 [doi]
- Threading dislocations in III-V semiconductors: Analysis of electrical conductionV. Iglesias, Marc Porti, C. Couso, Q. Wu, S. Claramunt, Montserrat Nafría, E. Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes. 4 [doi]
- Multi-cell soft errors at the 16-nm FinFET technology nodeN. Tam, Bharat L. Bhuva, Lloyd W. Massengill, D. Ball, M. McCurdy, Michael L. Alles, Indranil Chatterjee. 4 [doi]
- Employing transistor reliability testing as an FA tool for understanding HTOL product BIST failuresAbdullah Yassine, Lauren Blair, Wayland Seifert. 4 [doi]
- Self-heating and its implications on hot carrier reliability evaluationsSteven W. Mittl, Fernando Guarin. 4 [doi]
- Terrestrial SER characterization for nanoscale technologies: A comparative studyNihaar N. Mahatme, Bharat L. Bhuva, Nelson J. Gaspard, T. Assis, Y. Xu, P. Marcoux, M. Vilchis, Balaji Narasimham, A. Shih, Shi-Jie Wen, Rick Wong, N. Tam, M. Shroff, S. Koyoma, A. Oates. 4 [doi]
- Delay effects and frequency dependence of NBTI with sub-microsecond measurementsY. C. Huang, M.-H. Hsieh, T.-Y. Yew, W. Wang, D. Maji, Y. H. Lee, W. S. Chou, P.-Z. Kang. 4 [doi]
- Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFETMiaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen. 4 [doi]
- Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technologyM. Saliva, F. Cacho, C. Ndiaye, V. Huard, D. Angot, A. Bravaix, L. Anghel. 4 [doi]
- Impact of oxide liner properties on TSV Cu pumping and TSV stressJoke De Messemaeker, O. Varela Pedreira, A. Moussa, Nabi Nabiollahi, Kris Vanstreels, Stefaan Van Huylenbroeck, Harold Philipsen, P. Verdonck, Bart Vandevelde, Ingrid De Wolf, Eric Beyne, Kris Croes. 4 [doi]
- SOI FinFET soft error upset susceptibility and analysisPhil Oldiges, Kenneth P. Rodbell, Michael S. Gordon, John G. Massey, Kevin Stawiasz, Conal E. Murray, Henry H. K. Tang, K. Kim, K. Paul Muller. 4 [doi]
- Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devicesSoonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park. 4 [doi]
- Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctionsS. Van Beek, Koen Martens, Philippe Roussel, G. Donadio, J. Swerts, Sofie Mertens, G. Kar, T. Min, Guido Groeseneken. 4 [doi]
- Characterization and reliability of III-V gate-all-around MOSFETsMengwei Si, Sanghoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad A. Alam, Peide D. Ye. 4 [doi]
- Semi-empirical stress/energy-based acceleration of temperature cycling failureDavid Huitink, Alan Lucero. 5 [doi]
- CPI reliability and EMI benefit for MIM CAP embedded C4 packageHyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park. 5 [doi]
- The relationship between border traps characterized by AC admittance and BTI in III-V MOS devicesAbhitosh Vais, Koen Martens, J. Franco, D. Lin, A. Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer. 5 [doi]
- Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltagesN. Goel, P. Dubey, J. Kawa, S. Mahapatra. 5 [doi]
- General features of progressive breakdown in gate oxides: A compact modelFelix Palumbo, Moshe Eizenberg, Salvatore Lombardo. 5 [doi]
- Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessmentA. Bezza, M. Rafik, D. Roy, X. Federspiel, P. Mora, C. Diouf, V. Huard, G. Ghibaudo. 5 [doi]
- High voltage robustness of mold compounds under different environmental conditionsJulie Paye, Albert Claudi, Matthias Stecher. 5 [doi]
- Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggeringTzu-Cheng Kao, Chen-Hsin Lien, Chien-Wei Chiu, Jian-Hsing Lee, Yen-Hsiang Lo, Chung-Yu Hung, Tsung-Yi Huang, Hung-Der Su. 5 [doi]
- Package induced stress impact on transistor performance for ultra-thin SoCMd. Enamul Kabir, Dave Young, Bahattin Kilic, Ioan Sauciuc, Carl Sapp, Gerald S. Leatherman. 5 [doi]
- A new prediction method for ReRAM data retention statistics based on 3D filament structuresZhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, K. Eriguchi. 5 [doi]
- New TDDB lifetime model for AC inverter-like stress in advance FinFET structureI. K. Chen, C. L. Chen, Y. H. Lee, R. Lu, Y. W. Lee, H. H. Hsu, Y. W. Tseng, Y. W. Lin, J. R. Shih. 5 [doi]
- The electromigration behavior of copper pillars for different current directions and pillar shapesChristine S. Hau-Riege, You-Wen Yau, Kevin Caffey, Rajneesh Kumar, YangYang Sun, Andy Bao, Milind Shah, Lily Zhao, Omar Bchir, Ahmer Syed, Steve Bezuk. 5 [doi]
- Scenario for catastrophic failure in interconnect structures under chip package interactionMasaki Omiya, Shoji Kamiya, Nobuyuki Shishido, Kozo Koiwa, Hisashi Sato, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo. 5 [doi]
- Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layerNagarajan Raghavan, Michel Bosman, Kin Leong Pey. 5 [doi]
- Understanding pulsed-cycling variability and endurance in HfOx RRAMSimone Balatti, Stefano Ambrogio, Zhongqiang Wang, S. Sills, A. Calderoni, N. Ramaswamy, Daniele Ielmini. 5 [doi]
- Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAMNagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey. 5 [doi]
- Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperaturesMilos Stanisavljevic, Aravinthan Athmanathan, Nikolaos Papandreou, Haralampos Pozidis, Evangelos Eleftheriou. 5 [doi]
- On the volatility of oxide defects: Activation, deactivation, and transformationTibor Grasser, M. Wahl, Wolfgang Gös, Yannick Wimmer, A.-M. El-Sayed, A. L. Shluger, Ben Kaczer. 5 [doi]
- A collective relaxation model for resistance drift in phase change memory cellsAbu Sebastian, Daniel Krebs, Manuel Le Gallo, Haralampos Pozidis, Evangelos Eleftheriou. 5 [doi]
- Probabilistic design for reliability in electronics and photonics: Role, significance, attributes, challengesE. Suhir, A. Bensoussan, G. Khatibi, Johann Nicolics. 5 [doi]
- Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysisXiaonan Yang, Jing Liu, Zhiwei Zheng, Yan Wang, DanDan Jiang, Shengfen Chiu, HanMing Wu, Ming Liu. 5 [doi]
- A microscopic physical description of RTN current fluctuations in HfOx RRAMFrancesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher. 5 [doi]
- Investigation of nitrogen enhanced NBTI effect using the universal prediction modelPeng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan. 5 [doi]
- Impact of process variability on BEOL TDDB lifetime model assessmentKris Croes, Deniz Kocaay, Ivan Ciofi, Jürgen Bömmels, Zsolt Tokei. 5 [doi]
- Investigation of the data retention mechanism and modeling for the high reliability embedded split-gate MONOS flash memoryYoshiyuki Kawashima, Takashi Hashimoto, Ichiro Yamakawa. 6 [doi]
- Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testingYoann Mamy Randriamihaja, W. McMahon, S. Balasubramanian, Tanya Nigam, B. Parameshwaran, R. Mann, T. Klick, T. Schaefer, A. Kumar, Y. Song, V. Joshi, R. Ranjan, F. Chen. 6 [doi]
- Instabilities of SiC MOSFETs during use conditions and following bias temperature stressGregor Pobegen, Andreas Krassnig. 6 [doi]
- Techniques for heavy ion microbeam analysis of FPGA SER sensitivtyAdrian Evans, Dan Alexandrescu, Veronique Ferlet-Cavrois, Kay-Obbe Voss. 6 [doi]
- Coupled accelerated stress tests for comprehensive field reliability - Synergistic effects of moisture and temperature cyclingAnkur Aggarwal, Kabir Enamul, David Huitink, Nipun Sinha, Emre Armagan, Keqin Cao. 6 [doi]
- Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressingW. A. Sasangka, G. J. Syaranamual, Chee Lip Gan, Carl V. Thompson. 6 [doi]
- Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETsTian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs. 6 [doi]
- Non-volatile memory as hardware synapse in neuromorphic computing: A first look at reliability issuesRobert M. Shelby, Geoffrey W. Burr, Irem Boybat, Carmelo di Nolfo. 6 [doi]
- Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heatersPeter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier. 6 [doi]
- 28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operationP. Mora, X. Federspiel, F. Cacho, V. Huard, W. Arfaoui. 6 [doi]
- Thickness dependence on electrical and reliability properties for dense and porous low dielectric constant materialsKai-Chieh Kao, Chi Jia Huang, Chang-Sian Wu, Yi-Lung Cheng. 6 [doi]
- Analyzing path delays for accelerated testing of logic chipsEmily Ray, Barry P. Linder, Raphael Robertazzi, Kevin G. Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song. 6 [doi]
- Commercialization and reliability of 600 V GaN power switchesToshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, Yifeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh Mishra, Primit Parikh. 6 [doi]
- Positive-bias temperature instability (PBTI) of GaN MOSFETsAlex Guo, Jesús A. del Alamo. 6 [doi]
- Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETsHai Jiang, Longxiang Yin, Yun Li, Nuo Xu, Kai Zhao, YanDong He, Gang Du, Xiaoyan Liu, Xing Zhang. 6 [doi]
- SRAM Vmax stability considerationsD. Burnett, S. Balasubramanian, V. Joshi, S. Parihar, J. Higman, C. Weintraub. 6 [doi]
- From BTI variability to product failure rate: A technology scaling perspectiveV. Huard, D. Angot, F. Cacho. 6 [doi]
- Product-level reliability estimator with budget-based reliability management in 20nm technologyJae-Gyung Ahn, Ming-Feng Lu, Nitin Navale, Dawn Graves, Ping-Chin Yeh, Jonathan Chang, S. Y. Pai. 6 [doi]
- Long-term data for BTI degradation in 32nm IBM microprocessor using HKMG technologyPong-Fei Lu, Keith A. Jenkins, K. Paul Muller, Ralf Schaufler. 6 [doi]
- Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plateTzu-Cheng Kao, Jian-Hsing Lee, Chen-Hsin Lien, Chih-Hsien Wang, Kuang-Cheng Tai, Hung-Der Su. 6 [doi]
- The impact and implication of BTI/HCI decoupling on ring oscillatorM.-H. Hsieh, Y. C. Huang, T.-Y. Yew, W. Wang, Y. H. Lee. 6 [doi]
- CpK approach for the qualification of ECC-designs with single bit failuresGeorg Tempel. 6 [doi]
- A revolving reference odometer circuit for BTI-induced frequency fluctuation measurements under fast DVFS transientsSaroj Satapathy, Won Ho Choi, Xiaofei Wang, Chris H. Kim. 6 [doi]
- Workload-dependent BTI analysis in a processor core at high levelOlivier Héron, Chiara Sandionigi, E. Piriou, S. Mbarek, V. Huard. 6 [doi]
- Analysis of advanced circuits for SET measurementRui Liu, Adrian Evans, Qiong Wu, Yuanqing Li, Li Chen, Shi-Jie Wen, Rick Wong, Rita Fung. 7 [doi]
- Data retention statistics and modelling in HfO2 resistive switching memoriesStefano Ambrogio, Simone Balatti, Zhongqiang Wang, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Daniele Ielmini. 7 [doi]
- Duty cycle shift under static/dynamic aging in 28nm HK-MG technologyKetul B. Sutaria, Pengpeng Ren, Abinash Mohanty, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao. 7 [doi]
- PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bondingXiaoyu Tang, J. Lu, Rui Zhang, Yi Zhao, Wangran Wu, Chang Liu, Yi Shi, Ziqian Huang, Yuechan Kong. 7 [doi]
- RTS noise reduction of 1Y-nm floating gate NAND flash memory using process optimizationSungho Kim, Myeongwon Lee, Gil-Bok Choi, Jaekwan Lee, Yunbong Lee, Myoungkwan Cho, Kunok Ahn, Jinwoong Kim. 8 [doi]
- Impact of package on neutron induced single event upset in 20 nm SRAMTaiki Uemura, Takashi Kato, Hideya Matsuyama, Masanori Hashimoto. 9 [doi]
- Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arraysCarmine Miccoli, Giovanni M. Paolucci, Christian Monzio Compagnoni, Alessandro S. Spinelli, Akira Goda. 9 [doi]
- Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysisVictor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche. 11 [doi]
- Conductive filaments multiplicity as a variability factor in CBRAMUmberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst. 11 [doi]
- Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation testCyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, Fady Abouzeid, Sylvain Clerc, Lirida A. B. Naviner, Philippe Roche. 12 [doi]
- Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling periodR. Shirota, B.-J. Yang, Y.-Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi. 12 [doi]
- SRAM stability design comprehending 14nm FinFET reliabilityChoelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park. 13 [doi]