Table of Contents

• Variation-tolerant Computing with Memristive ReservoirsJens Burger, Christof Teuscher. 1-6 [doi]
• Design exploration methodology for memristor-based spiking neuromorphic architectures with the Xnet event-driven simulatorOlivier Bichler, David Roclin, Christian Gamrat, Damien Querlioz. 7-12 [doi]
• Doped HfO2 based nanoelectronic memristive devices for self-learning neural circuits and architectureSaptarshi Mandal, Branden Long, Ammaarah El-Amin, Rashmi Jha. 13-18 [doi]
• Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computingLigang Gao, Farnood Merrikh-Bayat, Fabien Alibart, Xinjie Guo, Brian D. Hoskins, Kwang-Ting Cheng, Dmitri B. Strukov. 19-22 [doi]
• Nanowire field-programmable computing platformSantosh Khasanvis, Mostafizur Rahman, Prasad Shabadi, Pritish Narayanan, Hyung Suk Yu, Chi On Chui, Csaba Andras Moritz. 23-25 [doi]
• MRAM-based logic array for large-scale non-volatile logic-in-memory applicationsHiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr. 26-27 [doi]
• Energy efficient computing using coupled Dual-Pillar Spin Torque Nano OscillatorsMrigank Sharad, Karthik Yogendra, Kaushik Roy. 28-29 [doi]
• Design methodologies for high density domain wall memorySwaroop Ghosh. 30-31 [doi]
• Embedded processors based on Spin Wave Functions (SPWFs)Santosh Khasanvis, Sankara Narayanan Rajapandian, Prasad Shabadi, Jiajun Shi, Csaba Andras Moritz. 32-33 [doi]
• Pulsed READ in spin transfer torque (STT) memory bitcell for lower READ disturbArijit Raychowdhury. 34-35 [doi]
• Novel MTJ-based shift register for non-volatile logic applicationsThomas Windbacher, Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr. 36-37 [doi]
• A pseudo-weighted sensing scheme for memristor based cross-point memoryZhijie Chen, Lu Zhang, Xiuyuan Bi, Hai Li. 38-39 [doi]
• Reading spin-torque memory with spin-torque sensorsMrigank Sharad, Rangharajan Venkatesan, Xuanyao Fong, Anand Raghunathan, Kaushik Roy. 40-41 [doi]
• Charge distribution in a molecular QCA wire based on bis-ferrocene moleculesAzzurra Pulimeno, Mariagrazia Graziano, Ruiyu Wang, Danilo Demarchi, Gianluca Piccinini. 42-43 [doi]
• Nanomechanical non-volatile memory for computing at extremeVaishnavi Ranganathan, Tina He, Srihari Rajgopal, Mehran Mehregany, Philip X.-L. Feng, Swarup Bhunia. 44-45 [doi]
• SATSoT: A methodology to map controllable-polarity devices on a regular fabric using SATCatherine Gasnier, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. 46-51 [doi]
• Foundations of memristor based PUF architecturesGarrett S. Rose, Nathan R. McDonald, Lok-Kwong Yan, Bryant T. Wysocki, Karen Xu. 52-57 [doi]
• Automatic Place&Route of Nano-magnetic Logic circuitsMarco Vacca, Stefano Frache, Mariagrazia Graziano, L. Di Crescenzo, Fabrizio Cairo, Maurizio Zamboni. 58-63 [doi]
• Understanding the impact of diode parameters on sneak current in 1Diode 1ReRAM crossbar architecturesYibo Li, Branden Long, Saptarshi Mandal, Wenbo Chen, Rashmi Jha. 64-69 [doi]
• Analytical study of complementary memristive synchronous logic gatesJean Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, Christophe Muller, Y. Zhang, Erya Deng, Jacques-Olivier Klein, Damien Querlioz, Dafine Ravelosona, Claude Chappert, W. S. Zhao. 70-75 [doi]
• Content-aware encoding for improving energy efficiency in multi-level cell resistive random access memoryHadi Hajimiri, Prabhat Mishra, Swarup Bhunia, Branden Long, Yibo Li, Rashmi Jha. 76-81 [doi]
• Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performanceYing-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen. 82-88 [doi]
• A PCM-based TCAM cell using NDRHao Wu, Fabrizio Lombardi, Jie Han. 89-94 [doi]
• Stochastic neuron design using conductive bridge RAMGiorgio Palma, Manan Suri, Damien Querlioz, Elisa Vianello, Barbara De Salvo. 95-100 [doi]
• Throughput-dissipation tradeoff in partially reversible nanocomputing: A case studyKyle J. Stearns, Neal G. Anderson. 101-105 [doi]
• Extending the fundamental error bounds for asymmetric error reliable computationNivard Aymerich, Antonio Rubio. 106-109 [doi]
• Proactive thermal management using memory based computingHadi Hajimiri, Mimonah Al Qathrady, Prabhat Mishra. 110-115 [doi]
• A cellular architecture for self-assembled 3D computational devicesNicholas J. Macias, Shivendra Pandey, A. Deswandikar, C. K. Kothapalli, C. K. Yoon, David H. Gracias, Christof Teuscher. 116-121 [doi]
• Towards heterogenous 3D-stacked reliable computing with von Neumann multiplexingGeorge Razvan Voicu, Sorin Dan Cotofana. 122-127 [doi]
• On the impact of 3D integration on high-throughput sensor information processing: A case study with image sensingDenny Lie, Kwanyeob Chae, Saibal Mukhopadhyay. 128-133 [doi]
• Experimental prototyping of beyond-CMOS nanowire computing fabricsMostafizur Rahman, Pritish Narayanan, Santosh Khasanvis, John Nicholson, Csaba Andras Moritz. 134-139 [doi]
• Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategyManan Suri, Daniele Garbin, Olivier Bichler, Damien Querlioz, Dominique Vuillaume, Christian Gamrat, Barbara De Salvo. 140-145 [doi]
• Effect of potential disorder on shot noise suppression in nanoscale devicesPaolo Marconcini. 146-151 [doi]
• Design of 8T-nanowire RAM arrayVikram Suresh, Akshaya Shanmugam, Lekshmi Krishnan, Avinash Bijjal, Mostafizur Rahman, Csaba Andras Moritz. 152-157 [doi]