E. M. Sankara Narayanan - researchr alias

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Viewing Publication 1 - 11 from 11

2021

Development of Current Limiting Ultra-Fast Solid-State Circuit BreakersZhongying Wang, E. M. Sankara Narayanan. iecon 2021: 1-6 [doi]

2017

Analysis of voltage source converters under DC line-to-line short-circuit fault conditionsMahmood Alwash, Mark R. Sweet, E. M. Sankara Narayanan. visalg 2017: 1801-1806 [doi]

Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switchPeng Luo, Hong Yao Long, Mark R. Sweet, Merlyne M. De Souza, E. M. Sankara Narayanan. visalg 2017: 612-615 [doi]

2015

The world's first high voltage GaN-on-diamond power devicesTurar Baltynov, Vineet Unni, E. M. Sankara Narayanan. essderc 2015: 126-129 [doi]

2014

Crosstalk in monolithic GaN-on-Silicon power electronic devicesVineet Unni, Hiroji Kawai, E. M. Sankara Narayanan. mr, 54(9-10):2242-2247, 2014. [doi]

2013

Comparison of the thermal properties of polycrystalline diamond and aluminium nitride substratesManoj Balakrishnan, Mark R. Sweet, E. M. Sankara Narayanan. iecon 2013: 544-548 [doi]

2005

Innovation in power semiconductor industry: past and futureNatalia A. Moguilnaia, Konstantin V. Vershinin, Mark R. Sweet, Oana I. Spulber, Merlyne M. De Souza, E. M. Sankara Narayanan. tem, 52(4):429-439, 2005. [doi]

2004

2001

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistorsM. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates. mr, 41(2):169-177, 2001. [doi]

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