R. Rodríguez - researchr alias

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Viewing Publication 1 - 22 from 22

2022

On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO2/W Experimental DataV. Mahboubi, Daniel Arumí, A. Gómez, R. Rodríguez, Salvador Manich. dcis 2022: 1-6 [doi]

2021

A Modified Version of K-Means AlgorithmAdriana Mexicano, J. C. Carmona, Salvador Cervantes, Jose-Antonio Cervantes, Sonia López, R. Rodríguez. 3pgcic 2022: 299-308 [doi]

2016

A new mimetic scheme for the acoustic wave equationF. Solano-Feo, J. M. Guevara-Jordan, O. Rojas, B. Otero, R. Rodríguez. jcam, 295:2-12, 2016. [doi]

2014

A posteriori error estimates for the problem of electrostatics with a dipole sourceAna Alonso Rodríguez, J. Camaño, R. Rodríguez, Alberto Valli. cma, 68(4):464-485, 2014. [doi]

2010

SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistorsJ. Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen. mr, 50(9-11):1263-1266, 2010. [doi]

2009

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stressesA. Crespo-Yepes, J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich. mr, 49(9-11):1024-1028, 2009. [doi]

2008

Emerging Yield and Reliability Challenges in Nanometer CMOS TechnologiesGeorges G. E. Gielen, P. De Wit, E. Maricau, J. Loeckx, J. Martin-Martinez, Ben Kaczer, Guido Groeseneken, R. Rodríguez, M. Nafría. date 2008: 1322-1327 [doi]

Definition, evolution, applications and barriers for deployment of microgrids in the energy sectorE. Perea, J. M. Oyarzabal, R. Rodríguez. ei, 125(12):432-437, 2008. [doi]

2007

2006

FinFET and MOSFET preliminary comparison of gate oxide reliabilityR. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, Ben Kaczer, Guido Groeseneken. mr, 46(9-11):1608-1611, 2006. [doi]

Towards an Optimal Implementation of MLP in FPGAEva M. Ortigosa, Antonio Cañas, R. Rodríguez, Javier Díaz, Sonia Mota. arc 2006: 46-51 [doi]

2005

Influence of oxide breakdown position and device aspect ratio on MOSFET s output characteristicsR. Fernández, R. Rodríguez, M. Nafría, X. Aymerich. mr, 45(5-6):861-864, 2005. [doi]

2004

Wavelets and Statistical Techniques for Data Analysis in a Mock-up High-Level waste Storage ExperimentI. Cañamón, Francisco Javier Elorza, A. Mangin, P. L. Martín, R. Rodríguez. ijwmip, 2(4):351-370, 2004. [doi]

2003

Influence and model of gate oxide breakdown on CMOS invertersR. Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang. mr, 43(9-11):1439-1444, 2003. [doi]

Circuit implications of gate oxide breakdownJames H. Stathis, R. Rodríguez, Barry P. Linder. mr, 43(8):1193-1197, 2003. [doi]

Reliability of ultra-thin oxides in CMOS circuitsJames H. Stathis, Barry P. Linder, R. Rodríguez, Salvatore Lombardo. mr, 43(9-11):1353-1360, 2003. [doi]

2002

Analysis of the effect of the gate oxide breakdown on SRAM stabilityR. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo. mr, 42(9-11):1445-1448, 2002. [doi]

2001

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO::2:: filmsR. Rodríguez, M. Porti, M. Nafría, X. Aymerich. mr, 41(7):1011-1013, 2001. [doi]

1999

Approximation of the vibration modes of a plate by Reissner-Mindlin equationsR. G. Durán, L. Hervella-Nieto, E. Liberman, R. Rodríguez, J. Solomin. moc, 68(228):1447-1463, 1999.

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