publications:
- title: "A Voltage-Mode Sample and Hold Circuit Based on the Switched Op-Amp Techniques"
  author:
  - name: "Mohammad Rashtian"
    link: "http://www.catc.ac.ir/rashtian"
  - name: " Omid Hashemipour and Keivan Navi"
    link: "https://researchr.org/alias/omid-hashemipour-and-keivan-navi"
  - name: " "
    link: "https://researchr.org/alias/"
  year: "2008"
  month: "June"
  tags:
  - "rule-based"
  researchr: "https://researchr.org/publication/Rashtianand-Keivan-Navi2008-0"
  cites: 0
  citedby: 0
  journal: "World Journal of Applied Science"
  volume: "4"
  number: "2"
  pages: "266-269"
  kind: "article"
  key: "Rashtianand-Keivan-Navi2008-0"
- title: "Design of A Low-Voltage High-Speed Switched-Capacitor Filters Using Improved Auto Zeroed Integrator"
  author:
  - name: "Mohammad Rashtian"
    link: "http://www.catc.ac.ir/rashtian"
  - name: " Omid Hashemipour and Keivan Navi"
    link: "https://researchr.org/alias/omid-hashemipour-and-keivan-navi"
  - name: " "
    link: "https://researchr.org/alias/"
  year: "2008"
  month: "April"
  doi: "10.3923/jas.2008.1771.1775 "
  tags:
  - "design"
  researchr: "https://researchr.org/publication/Rashtianand-Keivan-Navi2008"
  cites: 0
  citedby: 0
  journal: "Journal of Applied Science"
  volume: "7"
  number: "9"
  pages: "1771-1775"
  kind: "article"
  key: "Rashtianand-Keivan-Navi2008"
- title: "High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder"
  author:
  - name: "Keivan Navi"
    link: "http://ece.sbu.ac.ir/Desktopmodules/Sbu_ProfessorsPage/SP.aspx?userid=771"
  - name: "Mohammad Rashtian"
    link: "http://www.catc.ac.ir/rashtian"
  - name: "Khatir, A"
    link: "https://researchr.org/alias/khatir%2C-a"
  - name: "Keshavarzian, P"
    link: "https://researchr.org/alias/keshavarzian%2C-p"
  - name: "Hashemipour, O"
    link: "https://researchr.org/alias/hashemipour%2C-o"
  year: "2010"
  doi: "10.1007/s11671-010-9575-4"
  abstract: "Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD."
  tags:
  - "rule-based"
  - "meta-model"
  - "Meta-Environment"
  - "design"
  researchr: "https://researchr.org/publication/20671796"
  cites: 0
  citedby: 0
  journal: "Nanoscale Research Letters"
  volume: "5"
  number: "5"
  pages: "859-862"
  kind: "article"
  key: "20671796"