| 313 | -- | 314 | Vitezslav Benda. Power semiconductors |
| 315 | -- | 320 | Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Thomas Laska, Ulrich Kellner-Werdehausen, Josef Lutz. Thyristors and IGBTs with integrated self-protection functions |
| 321 | -- | 326 | P. Hazdra, V. Komarnitskyy. Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors |
| 327 | -- | 331 | Edward Xu, Olivier Trescases, I-Shan Michael Sun, Dora Lee, Wai Tung Ng, Kenji Fukumoto, Akira Ishikawa, Yuichi Furukawa, Hisaya Imai, Takashi Naito, Nobuyuki Sato, Satoru Tamura, Kaoru Takasuka, Teiichiro Kohno. Design of a rugged 60 V VDMOS transistor |
| 333 | -- | 340 | Yann Weber, Jaume Roig, Jean-Michel Reynes, F. Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse. Characterisation of P floating islands for 150-200 V FLYMOSFETs |
| 341 | -- | 346 | Ilja Pawel, Ralf Siemieniec, Maximilian Rosch, Franz Hirler, Reinhard Herzer. Experimental study and simulations on two different avalanche modes in trench power MOSFETs |
| 347 | -- | 356 | Deva N. Pattanayak, Yuming Bai, King Owyang. Low-voltage superjunction technology |
| 357 | -- | 365 | Florin Udrea. State-of-the-art technologies and devices for high-voltage integrated circuits |
| 366 | -- | 371 | Ettore Napoli. Limits and application of the newly proposed deep-depletion SOI LDMOS |
| 372 | -- | 379 | José Millán. Wide band-gap power semiconductor devices |
| 380 | -- | 386 | Mihai Brezeanu, Tim P. Butler, Nalin L. Rupesinghe, S. J. Rashid, Marioara Avram, Gehan A. J. Amaratunga, Florin Udrea, M. P. Dixon, Daniel J. Twitchen, A. Garraway, Dinesh Chamund, Paul Taylor. Single crystal diamond M-i-P diodes for power electronics |
| 387 | -- | 394 | D. Polenov, Josef Lutz, Hartmut Pröbstle, Andreas Brösse. Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes |