| 497 | -- | 503 | W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan. A study of the linearity between I::on:: and log I::off:: of modern MOS transistors and its application to stress engineering |
| 504 | -- | 507 | M. Z. Dai, S. I. Kim, Andrew Yap, Shaohua Liu, Arthur Cheng, Leeward Yi. A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET |
| 508 | -- | 513 | Qingxue Wang, Lanxia Sun, Andrew Yap. Investigation of hot carrier degradation in asymmetric nDeMOS transistors |
| 514 | -- | 525 | E. Atanassova, Albena Paskaleva, N. Novkovski. Effects of the metal gate on the stress-induced traps in Ta::2::O::5::/SiO::2:: stacks |
| 526 | -- | 530 | C. X. Li, X. Zou, P. T. Lai, J. P. Xu, C.-L. Chan. Effects of Ti content and wet-N::2:: anneal on Ge MOS capacitors with HfTiO gate dielectric |
| 531 | -- | 536 | N. Arpatzanis, A. T. Hatzopoulos, D. H. Tassis, C. A. Dimitriadis, F. Templier, M. Oudwan, G. Kamarinos. Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress |
| 537 | -- | 546 | Han-Chang Tsai. Numerical and experimental analysis of EMI effects on circuits with MESFET devices |
| 547 | -- | 554 | A. H. You, P. L. Cheang. Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD |
| 555 | -- | 562 | Jianxin Zhu, Zhihua Chen, Shuyuan Tang. Leaky modes of optical waveguides with varied refractive index for microchip optical interconnect applications - Asymptotic solutions |
| 563 | -- | 568 | F. N. Masana. Thermal impedance measurements under non-equilibrium conditions. How to extend its validity |
| 569 | -- | 577 | M. H. Lin, M. T. Lin, Tahui Wang. Effects of length scaling on electromigration in dual-damascene copper interconnects |
| 578 | -- | 583 | Zhenyu Wu, Yintang Yang, ChangChun Chai, Yuejin Li, JiaYou Wang, Jing Liu, Bin Liu. Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects |
| 594 | -- | 601 | Jun He, Yongjin Guo, Zhongqin Lin. Theoretical and numerical analysis of the effect of constant velocity on thermosonic bond strength |
| 602 | -- | 610 | Xiaowu Zhang, Kripesh Vaidyanathan, Tai-Chong Chai, Teck Chun Tan, D. Pinjala. Board level solder joint reliability analysis of a fine pitch Cu post type wafer level package (WLP) |
| 611 | -- | 621 | C. K. Wong, J. H. L. Pang, J. W. Tew, B. K. Lok, H. J. Lu, F. L. Ng, Y. F. Sun. The influence of solder volume and pad area on Sn-3.8Ag-0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging |
| 622 | -- | 630 | O. Nousiainen, L. Lehtiniemi, T. Kangasvieri, R. Rautioaho, J. Vähäkangas. Thermal fatigue endurance of collapsible 95.5Sn4Ag0.5Cu spheres in LTCC/PWB assemblies |
| 631 | -- | 637 | Young-Woo Lee, Ki Ju Lee, Y. Norman Zhou, Jae Pil Jung. Characteristics of Sn8Zn3Bi solder joints and crack resistance with various PCB and lead coatings |
| 638 | -- | 644 | Y. S. Chen, C. S. Wang, Y. J. Yang. Combining vibration test with finite element analysis for the fatigue life estimation of PBGA components |
| 645 | -- | 651 | J. S. Hwang. Filler size and content effects on the composite properties of anisotropic conductive films (ACFs) and reliability of flip chip assembly using ACFs |
| 652 | -- | 656 | Bo-In Noh, Jong Bum Lee, Seung-Boo Jung. Effect of surface finish material on printed circuit board for electrochemical migration |
| 657 | -- | 658 | Mile K. Stojcev. Dimitris Gizopoulos, Antonis Paschalis and Yervant Zorian, Embedded Processor-Based Self Test , Kluwer Academic Publishers, Dordrecht (2004) ISBN 1-4020-2785-0 217 pp., Hardcover, plus XV |
| 659 | -- | 660 | Mile K. Stojcev. Wim Claes, Willy Sansen and Robert Puers, Design of Wireless Autonomous Data-Logger ICs , Springer, Dordrecht (2006) ISBN 1-4020-3208-0 pp 199, Hardcover, plus XVI |
| 661 | -- | 662 | Mile K. Stojcev. Amr M. Fahim, Clock Generators for SoC Processors: Circuit and Architectures , Kluwer Academic Publishers, Boston (2005) ISBN 1-4020-8079-4 244 pp., Hardcover, plus XVIII |