Statistical reliability analysis of NBTI impact on FinFET SRAMs and mitigation technique using independent-gate devices

Yao Wang 0002, Sorin Dan Cotofana, Liang Fang. Statistical reliability analysis of NBTI impact on FinFET SRAMs and mitigation technique using independent-gate devices. In Csaba Andras Moritz, editor, Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012, Amsterdam, The Netherlands, July 4-6, 2012. pages 109-115, ACM, 2012. [doi]

Abstract

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