Yutaro Yamaguchi 0002, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi. Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 48-51, IEEE, 2018. [doi]
Abstract is missing.