Aditi Agarwal, Kijeong Han, B. Jayant Baliga. Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 237-238, IEEE, 2019. [doi]
Abstract is missing.