Pre- and post-BD electrical conduction of stressed HfO::2::/SiO::2:: MOS gate stacks observed at the nanoscale

L. Aguilera, M. Porti, M. Nafría, X. Aymerich. Pre- and post-BD electrical conduction of stressed HfO::2::/SiO::2:: MOS gate stacks observed at the nanoscale. Microelectronics Reliability, 45(9-11):1390-1393, 2005. [doi]

Abstract

Abstract is missing.