Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks

Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg. Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3-1, IEEE, 2018. [doi]

Abstract

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