8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology

Ahmed S. H. Ahmed, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell. 8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 164-167, IEEE, 2018. [doi]

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