Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter. Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. Microelectronics Reliability, 47(9-11):1406-1410, 2007. [doi]

@article{AlwanBKZ07-0,
  title = {Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses},
  author = {M. Alwan and B. Beydoun and K. Ketata and M. Zoaeter},
  year = {2007},
  doi = {10.1016/j.microrel.2007.07.096},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.07.096},
  researchr = {https://researchr.org/publication/AlwanBKZ07-0},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {9-11},
  pages = {1406-1410},
}