An Innovative 6T Hybrid SRAM Cell in sub-32 nm Double-Gate MOS Technology

Amara Amara, Bastien Giraud, Olivier Thomas. An Innovative 6T Hybrid SRAM Cell in sub-32 nm Double-Gate MOS Technology. In Fifth IEEE International Symposium on Electronic Design, Test & Applications, DELTA 2010, Ho Chi Minh City, Vietnam, January 13-15, 2010. pages 241-244, IEEE Computer Society, 2010. [doi]

Abstract

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