Esteve Amat, Antonio Calomarde, Ramon Canal, A. Rubio. Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. In 27th International Symposium on Power and Timing Modeling, Optimization and Simulation, PATMOS 2017, Thessaloniki, Greece, September 25-27, 2017. pages 1-6, IEEE, 2017. [doi]
Abstract is missing.