E. Amat, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. Influence of the SiO::2:: layer thickness on the degradation of HfO::2::/SiO::2:: stacks subjected to static and dynamic stress conditions. Microelectronics Reliability, 47(4-5):544-547, 2007. [doi]
@article{AmatRNAS07,
title = {Influence of the SiO::2:: layer thickness on the degradation of HfO::2::/SiO::2:: stacks subjected to static and dynamic stress conditions},
author = {E. Amat and R. Rodríguez and M. Nafría and X. Aymerich and James H. Stathis},
year = {2007},
doi = {10.1016/j.microrel.2007.01.003},
url = {http://dx.doi.org/10.1016/j.microrel.2007.01.003},
researchr = {https://researchr.org/publication/AmatRNAS07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {4-5},
pages = {544-547},
}