Stefano Ambrogio, Simone Balatti, Zhongqiang Wang, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Daniele Ielmini. Data retention statistics and modelling in HfO2 resistive switching memories. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 7, IEEE, 2015. [doi]
Abstract is missing.