Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment

Behnam Amelifard, Farzan Fallah, Massoud Pedram. Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment. In Georges G. E. Gielen, editor, Proceedings of the Conference on Design, Automation and Test in Europe, DATE 2006, Munich, Germany, March 6-10, 2006. pages 995-1000, European Design and Automation Association, Leuven, Belgium, 2006. [doi]

Abstract

Abstract is missing.