Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC

M. A. Anders, P. M. Lenahan, A. J. Lelis. Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

Abstract

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