Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors - researchr publication

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Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll. Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. Microelectronics Reliability, 47(9-11):1416-1418, 2007. [doi]

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