A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Kiyomi Naruke, Seiji Yamada, Yoichi Ohshima, Masamitsu Oshikiri, Yohei Hiura, Tomoko Yamane, Kuniyoshi Yoshikawa. A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation. J. Solid-State Circuits, 29(4):461-469, April 1994. [doi]

Abstract

Abstract is missing.