New reliability mechanisms in memory design for sub-22nm technologies

Nivard Aymerich, A. Asenov, A. Brown, Ramon Canal, B. Cheng, J. Figueras, Antonio González, Enric Herrero, S. Markov, M. Miranda, P. Pouyan, Tanausu Ramirez, Antonio Rubio, I. Vatajelu, Xavier Vera, X. Wang, P. Zuber. New reliability mechanisms in memory design for sub-22nm technologies. In 17th IEEE International On-Line Testing Symposium (IOLTS 2011), 13-15 July, 2011, Athens, Greece. pages 111-114, IEEE, 2011. [doi]

Abstract

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