New reliability mechanisms in memory design for sub-22nm technologies

Nivard Aymerich, A. Asenov, A. Brown, Ramon Canal, B. Cheng, J. Figueras, Antonio González, Enric Herrero, S. Markov, M. Miranda, P. Pouyan, Tanausu Ramirez, Antonio Rubio, I. Vatajelu, Xavier Vera, X. Wang, P. Zuber. New reliability mechanisms in memory design for sub-22nm technologies. In 17th IEEE International On-Line Testing Symposium (IOLTS 2011), 13-15 July, 2011, Athens, Greece. pages 111-114, IEEE, 2011. [doi]

Authors

Nivard Aymerich

This author has not been identified. Look up 'Nivard Aymerich' in Google

A. Asenov

This author has not been identified. Look up 'A. Asenov' in Google

A. Brown

This author has not been identified. Look up 'A. Brown' in Google

Ramon Canal

This author has not been identified. Look up 'Ramon Canal' in Google

B. Cheng

This author has not been identified. Look up 'B. Cheng' in Google

J. Figueras

This author has not been identified. Look up 'J. Figueras' in Google

Antonio González

This author has not been identified. Look up 'Antonio González' in Google

Enric Herrero

This author has not been identified. Look up 'Enric Herrero' in Google

S. Markov

This author has not been identified. Look up 'S. Markov' in Google

M. Miranda

This author has not been identified. Look up 'M. Miranda' in Google

P. Pouyan

This author has not been identified. Look up 'P. Pouyan' in Google

Tanausu Ramirez

This author has not been identified. Look up 'Tanausu Ramirez' in Google

Antonio Rubio

This author has not been identified. Look up 'Antonio Rubio' in Google

I. Vatajelu

This author has not been identified. Look up 'I. Vatajelu' in Google

Xavier Vera

This author has not been identified. Look up 'Xavier Vera' in Google

X. Wang

This author has not been identified. It may be one of the following persons: Look up 'X. Wang' in Google

P. Zuber

This author has not been identified. Look up 'P. Zuber' in Google