New reliability mechanisms in memory design for sub-22nm technologies

Nivard Aymerich, A. Asenov, A. Brown, Ramon Canal, B. Cheng, J. Figueras, Antonio González, Enric Herrero, S. Markov, M. Miranda, P. Pouyan, Tanausu Ramirez, Antonio Rubio, I. Vatajelu, Xavier Vera, X. Wang, P. Zuber. New reliability mechanisms in memory design for sub-22nm technologies. In 17th IEEE International On-Line Testing Symposium (IOLTS 2011), 13-15 July, 2011, Athens, Greece. pages 111-114, IEEE, 2011. [doi]

@inproceedings{AymerichABCCFGHMMPRRVVWZ11,
  title = {New reliability mechanisms in memory design for sub-22nm technologies},
  author = {Nivard Aymerich and A. Asenov and A. Brown and Ramon Canal and B. Cheng and J. Figueras and Antonio González and Enric Herrero and S. Markov and M. Miranda and P. Pouyan and Tanausu Ramirez and Antonio Rubio and I. Vatajelu and Xavier Vera and X. Wang and P. Zuber},
  year = {2011},
  doi = {10.1109/IOLTS.2011.5993820},
  url = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2011.5993820},
  tags = {Markov, reliability, design},
  researchr = {https://researchr.org/publication/AymerichABCCFGHMMPRRVVWZ11},
  cites = {0},
  citedby = {0},
  pages = {111-114},
  booktitle = {17th IEEE International On-Line Testing Symposium (IOLTS 2011), 13-15 July, 2011, Athens, Greece},
  publisher = {IEEE},
  isbn = {978-1-4577-1053-7},
}