A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme - researchr publication related

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Yong-Cheol Bae, Joon Young Park, Sang Jae Rhee, Seung Bum Ko, Yonggwon Jeong, Kwang-Sook Noh, Younghoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo-Sun Choi, Kyungseok Oh. A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, February 19-23, 2012. pages 44-46, IEEE, 2012. [doi]

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