First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application

K. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den bosch, Jan Van Houdt. First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]

@inproceedings{BanerjeeBMPSMPB21,
  title = {First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application},
  author = {K. Banerjee and L. Breuil and A. P. Milenin and M. Pak and J. Stiers and Sean R. C. McMitchell and L. Di Piazza and G. Van den bosch and Jan Van Houdt},
  year = {2021},
  doi = {10.1109/IMW51353.2021.9439620},
  url = {https://doi.org/10.1109/IMW51353.2021.9439620},
  researchr = {https://researchr.org/publication/BanerjeeBMPSMPB21},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021},
  publisher = {IEEE},
  isbn = {978-1-7281-8517-0},
}