First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application

K. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den bosch, Jan Van Houdt. First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]

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