Layout options for stability tuning of SRAM cells in multi-gate-FET technologies

Florian Bauer, Klaus von Arnim, Christian Pacha, Thomas Schulz, Michael Fulde, A. Nackaerts, M. Jurczak, Wade Xiong, K. T. San, C. Rinn Cleavelin, Klaus Schruefer, Georg Georgakos, Doris Schmitt-Landsiedel. Layout options for stability tuning of SRAM cells in multi-gate-FET technologies. In Doris Schmitt-Landsiedel, Tobias Noll, editors, 33rd European Solid-State Circuits Conference, ESSCIRC 2007, Munich, Germany, 11-13 September 2007. pages 392-395, IEEE, 2007. [doi]

Abstract

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