S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects

M. A. Belaïd, M. Gares, K. Daoud, Ph. Eudeline. S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectronics Reliability, 51(9-11):1551-1556, 2011. [doi]

Abstract

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