Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout - researchr publication authors

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N. Berbel, Raúl Fernández-García, Ignacio Gil, B. Li, Alexandre Boyer, Sonia Bendhia. Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectronics Reliability, 51(9-11):1564-1567, 2011. [doi]

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