A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology

S. Bernardini, Jean Michel Portal, Pascal Masson. A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology. In 2004 Design, Automation and Test in Europe Conference and Exposition (DATE 2004), 16-20 February 2004, Paris, France. pages 1404-1405, IEEE Computer Society, 2004. [doi]

Abstract

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