Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration

R. Berthelon, Fran├žois Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, D. Dutartre, A. Claverie, Michel Haond. Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 127-130, IEEE, 2016. [doi]

Abstract

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