Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

C. Bestory, F. Marc, S. Duzellier, H. Levi. Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror. Microelectronics Reliability, 49(9-11):946-951, 2009. [doi]

@article{BestoryMDL09,
  title = {Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror},
  author = {C. Bestory and F. Marc and S. Duzellier and H. Levi},
  year = {2009},
  doi = {10.1016/j.microrel.2009.07.025},
  url = {http://dx.doi.org/10.1016/j.microrel.2009.07.025},
  tags = {modeling, C++, reliability},
  researchr = {https://researchr.org/publication/BestoryMDL09},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {49},
  number = {9-11},
  pages = {946-951},
}