Monolithically Integrated High-Performance Ge-on-Si PIN Photodetectors with Nearly 60 GHz EO Bandwidth, 0.95 A/W Responsivity, <30 nA Dark Current and -36 dB Optical Return Loss Enabled by Ge Shape Optimization

Yusheng Bian, Abdelsalam Aboketaf, Won Suk Lee, Sujith Chandran, Edgar Huante-Ceron, Arman Najafi, Ana Villafranca, Hatef Shiran, Judson Holt, Francis Afzal, Kevin K. Dezfulian, Michelle Zhang, Brian Popielarski, Ming Gong, Javier Ayala, Patrick Snow, Helen Wong, Qidi Liu, Mrunal Shah, Felix Beaudoin, Frank Pavlik, Crystal Hedges, Frieder Baumann, Michal Rakowski, Takako Hirokawa, Andy Stricker, Oscar Restrepo, Brett Yatzor, Massimo Sorbara, Yahui Xiao, Kyle Murray, Mohammad Karimi, Akram Hajebifard, Prova Christina Gomes, Richard Grzybowski, John Martinho, Yu Zhang, Amit Gupta, Hanyi Ding, Kate McLean, Teodor Stanev, Paul Webster-Pact, Ah Fatt Tong, Prashanth Prasad Raghavendra, Mini Modh Ghosal, Mohamed Gheith, Ian Stobert, Ryan Sweeney, Minghui Zhang, Jonathan Rullan, Feng Chen, Arunima Dasgupta, Jae Rascoe, Andrea Paganini, Alban Zaka, Xinggong Wan, Asli Sahin, Janet Tinkler, Bob Mulfinger, Scott Hildreth, George Gifford, Rainer Gehres, Ryan Sporer, Rick Carter, Vikas Gupta, Ken Giewont, Isabelle Ferain, Ted Letavic. Monolithically Integrated High-Performance Ge-on-Si PIN Photodetectors with Nearly 60 GHz EO Bandwidth, 0.95 A/W Responsivity, <30 nA Dark Current and -36 dB Optical Return Loss Enabled by Ge Shape Optimization. In Optical Fiber Communications Conference and Exhibition, OFC 2025, San Francisco, CA, USA, March 30 - April 3, 2025. pages 1-3, IEEE, 2025. [doi]