Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, A. Pantellini, Claudio Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, D. De Salvador, M. Bazzan, Gaudenzio Meneghesso, Enrico Zanoni. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectronics Reliability, 55(9-10):1662-1666, 2015. [doi]
@article{BisiSRMRCSPLGLT15,
title = {Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs},
author = {Davide Bisi and Antonio Stocco and Isabella Rossetto and Matteo Meneghini and Fabiana Rampazzo and Alessandro Chini and Fabio Soci and A. Pantellini and Claudio Lanzieri and Piero Gamarra and C. Lacam and M. Tordjman and Marie-Antoinette di Forte-Poisson and D. De Salvador and M. Bazzan and Gaudenzio Meneghesso and Enrico Zanoni},
year = {2015},
doi = {10.1016/j.microrel.2015.06.038},
url = {http://dx.doi.org/10.1016/j.microrel.2015.06.038},
researchr = {https://researchr.org/publication/BisiSRMRCSPLGLT15},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {55},
number = {9-10},
pages = {1662-1666},
}