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Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

M. Blaho, Dionyz Pogany, E. Gornik, M. Denison, G. Groos, M. Stecher. Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectronics Reliability, 43(4):545-548, 2003. [doi]

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M. Blaho

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Dionyz Pogany

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E. Gornik

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M. Denison

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G. Groos

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M. Stecher

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